Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO26338.87€/ gab.Цена в том числе НДС 21%
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Manufacturer: | IXYS |
Case: | TO263 |
Features of semiconductor devices: | high voltage |
Kind of package: | tube |
Mounting: | SMD |
Power dissipation: | 150W |
Gate charge: | 65nC |
Technology: | BiMOSFET™ |
Collector-emitter voltage: | 1.7kV |
Gate-emitter voltage: | ±20V |
Collector current: | 10A |
Pulsed collector current: | 40A |
Turn-on time: | 43ns |
Turn-off time: | 370ns |
Type of transistor: | IGBT |
Вес единицы: | 0.001 кг |
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Минимальный заказ: | 1 |