 | Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.066.95€/ gab.Cena ieskaitot PVN 21%
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Produkta apraksts
| Manufacturer: | STARPOWER SEMICONDUCTOR |
| Max. off-state voltage: | 1.2kV |
| Semiconductor structure: | diode/transistor |
| Gate-emitter voltage: | ±20V |
| Collector current: | 35A |
| Pulsed collector current: | 70A |
| Electrical mounting: | Press-in PCB |
| Mechanical mounting: | screw |
| Type of module: | IGBT |
| Technology: | Advanced Trench FS IGBT |
| Topology: | boost chopper |
| Topology: | IGBT three-phase bridge OE output |
| Topology: | NTC thermistor |
| Topology: | three-phase diode bridge |
| Case: | L3.0 |
Parametri
| Vienības svars: | 0.043 kg |
|---|---|
| Minimālais pasūtījums: | 1 |
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