Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W16.21€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | GeneSiC SEMICONDUCTOR |
Technology: | G3R™ |
Technology: | SiC |
Mounting: | THT |
Power dissipation: | 207W |
Case: | TO247-3 |
Kind of package: | tube |
Pulsed drain current: | 80A |
Drain-source voltage: | 1.2kV |
Drain current: | 29A |
On-state resistance: | 75mΩ |
Type of transistor: | N-MOSFET |
Polarisation: | unipolar |
Gate charge: | 54nC |
Kind of channel: | enhanced |
Gate-source voltage: | -5...15V |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 59 26.90 € -+ | Ir pieejams: 1 29.19 € -+ |