Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W11.69€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | IXYS |
Case: | TO3P |
Kind of package: | tube |
Technology: | Trench™ |
Reverse recovery time: | 150ns |
Features of semiconductor devices: | thrench gate power mosfet |
Mounting: | THT |
Drain-source voltage: | 200V |
Drain current: | 75A |
On-state resistance: | 16mΩ |
Type of transistor: | N-MOSFET |
Power dissipation: | 830W |
Polarisation: | unipolar |
Gate charge: | 150nC |
Kind of channel: | enhanced |
Gate-source voltage: | ±20V |
Pulsed drain current: | 320A |
Vienības svars: | 0.005 kg |
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Minimālais pasūtījums: | 1 |