Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W2.56€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | VISHAY |
Mounting: | SMD |
Features of semiconductor devices: | ESD protected gate |
Case: | DPAK |
Case: | TO252 |
Power dissipation: | 62.5W |
Drain-source voltage: | 800V |
Drain current: | 1.8A |
On-state resistance: | 2.5Ω |
Type of transistor: | N-MOSFET |
Polarisation: | unipolar |
Gate charge: | 10.5nC |
Kind of channel: | enhanced |
Gate-source voltage: | ±30V |
Pulsed drain current: | 3.6A |
Minimālais pasūtījums: | 1 |
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Ir pieejams: 98 9.56 € -+ |