Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO2474.83€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | STMicroelectronics |
Case: | TO247 |
Technology: | SuperMesh™ |
Features of semiconductor devices: | ESD protected gate |
Mounting: | THT |
Kind of package: | tube |
Drain-source voltage: | 800V |
Drain current: | 6.6A |
On-state resistance: | 0.65Ω |
Type of transistor: | N-MOSFET |
Power dissipation: | 190W |
Polarisation: | unipolar |
Kind of channel: | enhanced |
Gate-source voltage: | ±30V |
Vienības svars: | 0.004 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 4 39.88 € -+ |