Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH81.00€/ gab.Cena ieskaitot PVN 21%
|
Manufacturer: | ONSEMI |
Mounting: | SMD |
Application: | charging control |
Drain-source voltage: | 24V |
Drain current: | 11A |
On-state resistance: | 9.1mΩ |
Type of transistor: | N-MOSFET x2 |
Power dissipation: | 1.4W |
Polarisation: | unipolar |
Kind of package: | reel |
Kind of package: | tape |
Features of semiconductor devices: | ESD protected gate |
Gate charge: | 10nC |
Kind of channel: | enhanced |
Gate-source voltage: | ±12.5V |
Pulsed drain current: | 60A |
Case: | ECH8 |
Semiconductor structure: | common drain |
Minimālais pasūtījums: | 3 |
---|