Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV21.43€/ gab.Cena ieskaitot PVN 21%
|
Manufacturer: | IXYS |
Mounting: | SMD |
Case: | TO268HV |
Collector-emitter voltage: | 1.7kV |
Gate-emitter voltage: | ±20V |
Collector current: | 10A |
Pulsed collector current: | 40A |
Turn-on time: | 43ns |
Turn-off time: | 370ns |
Type of transistor: | IGBT |
Power dissipation: | 150W |
Kind of package: | tube |
Features of semiconductor devices: | high voltage |
Gate charge: | 65nC |
Technology: | BiMOSFET™ |
Vienības svars: | 0.003 kg |
---|---|
Minimālais pasūtījums: | 1 |