Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV78.26€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | IXYS |
Collector-emitter voltage: | 3kV |
Gate-emitter voltage: | ±20V |
Collector current: | 42A |
Pulsed collector current: | 400A |
Turn-on time: | 652ns |
Turn-off time: | 950ns |
Type of transistor: | IGBT |
Power dissipation: | 500W |
Kind of package: | tube |
Features of semiconductor devices: | high voltage |
Gate charge: | 200nC |
Technology: | BiMOSFET™ |
Mounting: | SMD |
Case: | TO268HV |
Vienības svars: | 0.003 kg |
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Minimālais pasūtījums: | 1 |